| 摘要 |
A transistor manufacturing process includes the formation, on a layer (15) that will form the base of the transistor, of a stack of an SiGe alloy layer (16), a silicon oxide layer (17) and a silicon nitride layer (18), so as to form in this layer, a false emitter (20), to form, in the layer (15) that will form the base, an extrinsic base region (22) and to siliconize the surface of this extrinsic base region, to cover the extrinsic base region (22) and the false emitter (20) with a silicon dioxide layer (24) which is chemically and mechanically polished down to the level of the false emitter (20), to etch the false emitter (20) in order to form a window (25) and to form, in the window (25) and on the silicon dioxide layer (24), a polysilicon emitter (27). This process has particular application to manufacturing heterojunction bipolar transistors.
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