发明名称 Semiconductor device manufacturing method
摘要 With a semiconductor device manufacturing method, a lower-layer interconnection is formed on a circuit board on which a plurality of semiconductor chips are mounted. Using a screen plate with openings corresponding to desired positions on the lower-layer interconnection, screen printing of a metal paste is effected, and the printed metal paste is dried and calcined by heat treatment to form a metal pillar on the lower-layer interconnection. An insulating film covering the lower-layer interconnection and the metal pillar is formed so that the tip of the metal pillar may be exposed. An upper-layer interconnection is formed on the insulating film so that this layer may contact with the exposed tip of the metal pillar.
申请公布号 USRE37882(E1) 申请公布日期 2002.10.15
申请号 US19970000865 申请日期 1997.12.30
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 EZAWA HIROKAZU;MIYATA MASAHIRO
分类号 H01L21/3205;H01L21/768;H01L23/12;H01L23/522;H05K1/03;H05K3/22;H05K3/40;H05K3/46;(IPC1-7):H01L21/44 主分类号 H01L21/3205
代理机构 代理人
主权项
地址