| 摘要 |
A semiconductor device has a plurality of basic units formed on a semiconductor substrate, each including a memory element and a logic element and having the same or bilateral symmetry structure. Each basic unit has a DRAM cell formed in a first active region, serially connected transistors of a logic element formed in a second active region and having second and third gate electrodes and source/drain regions with silicide layers, first and second signal lines connected to the source/drain regions of the transistor pair, a third signal line connected to the second gate electrode, and a conductive connection terminal formed under the storage electrode of a DRAM capacitor for connecting the storage electrode and third gate electrode. A semiconductor device is provided which has a plurality of basic units each including a memory cell and a logic cell formed on the same semiconductor substrate, the device being easy to manufacture and capable of high integration.
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