发明名称 |
MOSFET device and fabrication method thereof |
摘要 |
A MOSFET device includes a gate formed on a multi-surface area of a semiconductor substrate formed of a first surface which is not etched, a second surface etched in parallel with the first surface, and a surface connecting the first and second surfaces. A source/drain region is formed below each of the first and second surfaces laterally adjacent to a gate prevailed on the matter surface. A first contact is formed of a conductive material formed on an upper surface of the source/drain region, and a second contact is formed of a conductive material formed on the gate, so that it is possible to prevent a punch through phenomenon, increase the integrity of the device, and decrease the contact resistance of a contact formed on the gate.
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申请公布号 |
US6465831(B1) |
申请公布日期 |
2002.10.15 |
申请号 |
US20000631954 |
申请日期 |
2000.08.03 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
PARK SEONG-JO;SUNG YANG-SOO |
分类号 |
H01L21/8234;H01L21/8242;H01L27/108;H01L29/78;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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