发明名称 TREATMENT DEVICE FOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide a treatment device for wafer such as a filming device or a heat treatment furnace, with which a temperature can be controlled by a proper temperature control treatment method (recipe) without operation even if a temperature setting value or the like is erroneously inputted. SOLUTION: In the treatment device for wafer heating a treatment chamber for treating a wafer, a holding means for holding the wafer to be put into the treatment chamber and a moving means for making the holding means enter/leave the treatment chamber, as sensor reading parts, a flag (projecting part) (7) and a flag (recessed part) (8) are provided on a board base part (11), the treatment device for wafer has a sensor part (flood side and light-receiving side 10) provided to detect the sensor reading parts, while the holding means is located outside the treatment chamber, and a control part for automatically inputting recipe parameters, corresponding to a signal detected by the sensor part or treatment device for wafer, is provided with a control part for comparing the signal detected by the sensor part with the manually inputted recipe parameters.
申请公布号 JP2002299258(A) 申请公布日期 2002.10.11
申请号 JP20010100165 申请日期 2001.03.30
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 HOSAKA EIJI;YANAGAWA HIDEHIRO;MIYATA TOSHIMITSU
分类号 C23C14/54;C23C16/52;H01L21/205;H01L21/22;H01L21/324;(IPC1-7):H01L21/205 主分类号 C23C14/54
代理机构 代理人
主权项
地址