THIN FILM TRANSISTOR USING INTEGRATED THIN FILM OF MOW/AL OR AL ALLOY/MOW, THIN FILM TRANSISTOR ARRAY AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To overcome the problem of damage to a base film by dry etching when a Ti/Al/Ti film is used as the source/drain wiring electrode of an amorphous silicon thin film transistor. SOLUTION: When MoW/Al/MoW is used as the source/drain wiring electrode, wet etching is realized. The cross section shape of the wiring electrode is controlled by optimizing various conditions. In working the electrode, damage to an underlying semiconductor layer is eliminated and characteristic deterioration is prevented.