| 摘要 |
PROBLEM TO BE SOLVED: To perform crystallization simultaneously on a plurality of substrates at low temperature. SOLUTION: An amorphous silicon layer is deposited on a substrate 40 and is crystallized by using MILC(metal-induced lateral crystallization). Specifically, the amorphous silicon layer is crystallized during thermal treatment of the active layer. The thermal treatment causes MILC of the active layer propagating from portions of the source, and the drain regions on which MILC source metal 46 is formed via the contact holes of the TFT. The TFT, fabricated according to this method, has improved electrical characteristics, such as electron mobility and leakage current. This method further improves the performance of the TFT, by forming an MILC boundary 49 outside the channel region, so that the MILC boundary is not adversely affected by the operation of the TFT.
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