| 摘要 |
PROBLEM TO BE SOLVED: To simultaneously suppress cracks and through transition. SOLUTION: A mask 2, with which a group III nitride compound semiconductor is not epitaxially grown, is formed into lattice, and the surface of a wafer 1 is separately exposed so that an epitaxial growing region can be made into respectively independent small region. In such a case, a reaction-proofing layer mainly composed of a monocrystal is formed so that the chemical reaction of the wafer and the group III nitride compound semiconductor on the upper layer caused by stress and heat can not occur in a production process. Afterwards, a distortion relax layer is formed by alternately forming the group III nitride compound semiconductors of the same or different compositions within two different temperature ranges so that the stress of the wafer and the upper layer can be relaxed and the occurrence of through transition can be suppressed or through transition can be extinguished on the upper epitaxial layer. In the desired group III nitride compound semiconductor to be formed thereon, through transition can be suppressed, while preventing cracks. |
