| 摘要 |
PROBLEM TO BE SOLVED: To provide an IGBT-type semiconductor device whose switching characteristic when in turn-off is close to an MOSFET-type and to provide the manufacturing method. SOLUTION: A conductive film 20 which has a function as a collector electrode and is connected to an EQR electrode 25 is formed on the back and a peripheral side of the semiconductor device 1. When voltage is applied to an emitter electrode 18 and the conductive film 20, current flowing through a p<+> -type layer 10, an n<-> -type layer 11, a P well layer 12 and an N<+> -type diffusion area 13 and current flowing in the EQR electrode 25, a channel stopper area 24, the N<-> -type layer 11, the P well layer 12 and the N<+> -type diffusion area 13 are generated. Thus, the IGBT-type semiconductor device close to the MOSFET-type is constituted. |
