| 摘要 |
PROBLEM TO BE SOLVED: To prevent effectively disturbance of data between adjacent memory cells in FeRAM elements sharing a cell plate between adjacent memory cells. SOLUTION: In a ferroelectric memory element sharing a cell plate between a first memory cell driven by a first word line and a second memory cell driven by a second word line and the first and the second memory cell are connected to the same bit line, the first memory cell has a first ferroelectric capacitor including a first electrode connected to the shared cell plate, a ferroelectric film, and a second electrode opposing to a first electrode, a first transistor in which a gate electrode is connected to the first word line and a source and a drain are connected respectively to a bit line and a second electrode of the first ferroelectric capacitor, and a second transistor in which a gate electrode is connected to the second word line and a source and a drain are connected respectively to a the second electrode of the first ferroelectric capacitor and the cell plate.
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