| 摘要 |
PURPOSE: A semiconductor device is provided to realize measurement precision for forward voltage effect characteristics using a relatively small current. CONSTITUTION: A semiconductor device includes a second conductivity type of first anode region formed to partially constitute the upper surface of the first conductivity type of semiconductor substrate(1) and having an anode electrode(5,7) formed on its upper surface, the second anode region formed within the first anode region, and an anode electrode formed on the second anode region. The second anode region is electrically isolated from the first anode region, and the anode electrode formed on the upper surface of the second anode region is independent of the anode electrode formed on the upper surface of the first anode region.
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