METHOD FOR MANUFACTURING THIN FILM TRANSISTOR

摘要

PURPOSE: A method for manufacturing a thin film transistor is provided to remove degradation focus of a back channel and improve the characteristics of the thin film transistor by reducing the number of mask processes. CONSTITUTION: A method for manufacturing a thin film transistor includes the steps of forming a gate electrode on a board, forming a gate insulating film, a semiconductor layer, and an etch stopper layer on the gate electrode in order; forming a via hole by selectively removing the etch stopper layer to disclose a predetermined part of the semiconductor layer; selectively forming a n+ semiconductor layer, and source and drain electrodes(107a) on the etch stopper layer including the via hole; and forming a pixel electrode(108a) by selectively removing an evaporated ITO(Indium Tin Oxide) layer to be connected with the source electrode and the drain electrode.