| 摘要 |
PROBLEM TO BE SOLVED: To provide a photodiode manufacturing method which takes a simple manufacturing process, ensures a high speed response and can deal with large- diameter semiconductor substrates. SOLUTION: The method comprises providing a damage buffer layer 18 on an n-type InP cap layer 16, forming a mask layer 23 and a ZnO layer 20 thereon, diffusing Zn in the ZnO layer 20 into the cap layer 16 to form a p-type diffused region 22 forming a guard ring, similarly diffusing Zn in other ZnO layer into the cap layer 16 through other mask layer on the damage buffer layer 18 and the damage buffer layer 18 to form a p-type diffused region forming a light receiving region, and removing the damage suppression layer 18.
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