发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
The semiconductor device comprises: an insulation film 72 formed over a silicon substrate 10, an insulation film 78 formed on the insulation film 72 and having opening 82, and conductor 84 formed at least in the opening 82. Cavity 88 having the peripheral edges conformed to a configuration of the opening 82 is formed in the insulation film 72. The cavity 88 is formed in the region between the electrodes or the regions between the interconnection layers so as to decrease the dielectric constant between the electrodes or between the interconnection layers, whereby the parasitic capacitances of the region between the electrodes or the region between the interconnection layers can be drastically decreased, and consequently the semiconductor device can have higher speed.
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申请公布号 |
US2002145199(A1) |
申请公布日期 |
2002.10.10 |
申请号 |
US20020095101 |
申请日期 |
2002.03.12 |
申请人 |
NAKAMURA SHUNJI;YOSHIDA EIJI |
发明人 |
NAKAMURA SHUNJI;YOSHIDA EIJI |
分类号 |
H01L23/522;H01L21/768;H01L21/8234;H01L21/8242;H01L27/088;H01L27/108;(IPC1-7):H01L21/824;H01L29/40;H01L23/52;H01L23/48 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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