Process for etching phase shift layers in half-tone phase masks used in the production of microchips comprises depositing a phase shift layer on a substrate, applying a mask, and plasma

摘要

Process for etching phase shift layers in half-tone phase masks comprises depositing a phase shift layer on a substrate; applying a mask on the phase shift layer; and plasma etching the structure produced into the phase shift layer. Plasma etching is carried out in an etching reactor with a plasma produced from a fluorinated hydrocarbon having a ratio of F/H of not more than 2 and oxygen. Preferred Features: The fluorinated hydrocarbon is CH3F. The cathode power of the reactor is more than 20 W to etch the structure into the phase shift reactor. The phase shift layer is made from molybdenum/silicon nitride. The substrate is made from quartz glass. The mask is a chromium mask.