| 发明名称 |
FILM FORMING METHOD AND FILM FORMING DEVICE |
| 摘要 |
A film forming method, comprising the steps of generating plasma (10) in a film forming chamber (2), exciting mainly nitrogen gas (11) in the film forming chamber (2), and reacting hydrogen gas-diluted diborane gas (13) to form a boron nitride film (15) on a substrate (4), whereby the boron nitride film (15) with excellent mechanical and chemical resistances, high heat conductivity, and a low dielectric constant of (k) can be formed on the substrate at a high rate.
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| 申请公布号 |
WO02080256(A1) |
申请公布日期 |
2002.10.10 |
| 申请号 |
WO2002JP03071 |
申请日期 |
2002.03.28 |
| 申请人 |
MITSUBISHI HEAVY INDUSTRIES, LTD.;SAKAMOTO, HITOSHI;UEDA, NORIAKI;SUGINO, TAKASHI |
发明人 |
SAKAMOTO, HITOSHI;UEDA, NORIAKI;SUGINO, TAKASHI |
| 分类号 |
C01B21/064;C01B21/082;C04B35/583;C23C16/30;C23C16/34;C23C16/36;C23C16/38;H01L21/31;H01L21/318;(IPC1-7):H01L21/314 |
主分类号 |
C01B21/064 |
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