| 摘要 |
To improve a problem that according to a conventional technology, an accurate planarization is not achieved since an etching rate profile is assumed to be the same regardless of a position of a nozzle relative to a semiconductor wafer, since the etching rate profile is deformed by being influenced by a distance epsi, a degree of deformation of the etching rate profile is previously calculated for respective position (distance epsi) of a nozzle and an etching rate calculated thereby is used in calculating nozzle speed at a vicinity of an outer edge.
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