| 摘要 |
A method for manufacturing a semiconductor device having a non-volatile memory transistor may include the steps of forming a floating gate 22 over a semiconductor layer 10 through a first insulation layer 20, forming a second insulation layer 26 that contacts the floating gate 22, forming a control gate 28 over the second insulation layer 26, forming a source region 14 and a drain region 16 in the semiconductor layer 10, depositing a insulation layer 40 over the semiconductor layer 10, and etching the insulation layer 40 to form a sidewall insulation layer, wherein the etching of the insulation layer 40 is conducted such that the insulation layer 40 remains above the floating gate 40, and the floating gate 22 is not exposed.
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