Dielectric layer recovery method for integrated circuit manufacture, involves planarizing spin on glass layer by etching to form new dielectric layer

摘要

A dielectric layer (21) is formed on a dielectric layer (15) covering the voids by grinding the surface of dielectric layer (15). A spin on glass (SOG) layer (23) is formed on the dielectric layer (21). The SOG layer is planarized by etching to form a dielectric layer (24).