BODY-TIED SILICON ON INSULATOR SEMICONDUCTOR DEVICE STRUCTURE AND METHOD THEREFOR

摘要

A silicon on insulator (SOI) device structure and method therefore in which the SOI device structure utilizes a conductive body contact region (220) under a partial trench isolation region (250) to connect a doped region (320), which is a conductive area, with the body region (380) of the device such that the desired potential within the body region (380) can be achieved. This is accomplished by patterning the silicon on insulator (SOI) substrate and etching away the portion of the substrate within which the partial trench isolation is to be formed. Following the etching operation, an implant step dopes the remaining portion of the silicon film underlying the partial trench isolation region (250) to achieve the desired conductivity. Full trench isolation regions (240) are then patterned and formed. Subsequent formation of contacts (710, 720) and other layers of interconnect (750) complete formation of the SOI device.