| 发明名称 |
Process for the production of a chalcopyrite structure semiconductor thin film containing a specific dopant |
| 摘要 |
<p>A I-III-VI 2 chalcopyrite semiconductor film containing a Group VII element as a dopant, and methods to produce such a chalcopyrite film are provided. The chalcopyrite film of the present invention has stoichiometric composition, and electrical characteristics such as p-n conduction type, carrier concentration and the like are controlled. <IMAGE></p> |
| 申请公布号 |
EP0817279(B1) |
申请公布日期 |
2002.10.09 |
| 申请号 |
EP19970113690 |
申请日期 |
1994.02.10 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NEGAMI, TAKAYUKI;NISHITANI, MIKIHIKO;KOHIKI, SHIGEMI;WADA, TAKAHIRO |
| 分类号 |
H01L21/363;H01L31/032;H01L31/04;H01L33/28;H01L33/30;H01L33/40;H01S5/00;(IPC1-7):H01L31/032;H01L33/00 |
主分类号 |
H01L21/363 |
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