发明名称 Architecture and scheme for a non-strobed read sequence
摘要 A cell (10a) to be read is connected between two bit lines (BLS,BLD) and all bit lines are connected to a Y decoder (12), connecting the lines to a supply line (14) and to a sensing line (16). A sensing module (100) that can generate one output datum uses a reference unit (104) driven by a non-strobed gate voltage. An independent claim is included for a method of sensing a close-to-the-ground signal received from a memory cell.
申请公布号 EP1248260(A1) 申请公布日期 2002.10.09
申请号 EP20020252405 申请日期 2002.04.03
申请人 SAIFUN SEMICONDUCTORS LTD 发明人 MAAYAN, EDUARDO;SOFER, YAIR;ELIYAHU, RON;EITAN, BOAZ
分类号 G11C7/06;G11C7/14;G11C16/28 主分类号 G11C7/06
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