发明名称 |
Architecture and scheme for a non-strobed read sequence |
摘要 |
A cell (10a) to be read is connected between two bit lines (BLS,BLD) and all bit lines are connected to a Y decoder (12), connecting the lines to a supply line (14) and to a sensing line (16). A sensing module (100) that can generate one output datum uses a reference unit (104) driven by a non-strobed gate voltage. An independent claim is included for a method of sensing a close-to-the-ground signal received from a memory cell. |
申请公布号 |
EP1248260(A1) |
申请公布日期 |
2002.10.09 |
申请号 |
EP20020252405 |
申请日期 |
2002.04.03 |
申请人 |
SAIFUN SEMICONDUCTORS LTD |
发明人 |
MAAYAN, EDUARDO;SOFER, YAIR;ELIYAHU, RON;EITAN, BOAZ |
分类号 |
G11C7/06;G11C7/14;G11C16/28 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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