发明名称 Electrostatic discharge protection circuit layout
摘要 An ESD protection circuit layout. The ESD protection circuit layout has a first ESD protection device, a second ESD protection device, a first CDM ESD protection device, a second CDM ESD protection device, a first charge flow prevention device, a PMOS transistor, an input resistor, an NMOS transistor, a second charge flow prevention device and a substrate resistor. Charges within an integrated circuit device are discharged through a discharging loop comprising of the first CDM ESD protection device and the second CDM ESD protection device. Ultimately, the integrated circuit device is protected against CDM ESD and electrical latch-up within the integrated circuit is also minimized.
申请公布号 US6462601(B1) 申请公布日期 2002.10.08
申请号 US20010898397 申请日期 2001.07.03
申请人 FARADAY TECHNOLOGY CORP. 发明人 CHANG HUNG-YI;CHANG YI-HUA
分类号 G11C5/00;G11C7/10;G11C7/24;H01L27/02;(IPC1-7):H03L5/00 主分类号 G11C5/00
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