发明名称 Composition for positive photoresist
摘要 A photoresist composition is provided. The photoresist composition includes a polymer resin for forming a photoresist layer, a photosensitive chemical for changing solubility of the photoresist layer when exposed to some form of radiation, and 3-methoxybutyl acetate, 2-heptanone, and 4-butyrolactone as a solvent. The composition has a good photosensitivity and remainder ratio, and no unpleasant odor.
申请公布号 US6461785(B1) 申请公布日期 2002.10.08
申请号 US20000651114 申请日期 2000.08.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JU JIN-HO;LEE YU-KYUNG;PARK HONG-SIK;NAH YUN-JUNG;KIM KI-SOO;KANG SUNG-CHUL
分类号 C08K5/28;C08L61/10;G03F7/004;G03F7/022;G03F7/023;H01L21/027;(IPC1-7):G03F7/023 主分类号 C08K5/28
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