| 发明名称 |
Method of etching insulating layer in semiconductor device |
| 摘要 |
A method for etching an insulating layer in a semiconductor device includes forming an insulating layer, such as silicon oxide or silicon nitride layer, on a semiconductor substrate and dry etching the insulating layer using a reactive gas including Ar, and C4HxF8-xO, wherein x is an integer from 0 to 4. The reactive gas may further include oxygen gas.
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| 申请公布号 |
US6461975(B1) |
申请公布日期 |
2002.10.08 |
| 申请号 |
US20000685097 |
申请日期 |
2000.10.11 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEONG SANG-SUP;AHN TAE-HYUK |
| 分类号 |
H01L21/28;H01L21/302;H01L21/306;H01L21/3065;H01L21/311;H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/28 |
| 代理机构 |
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