| 摘要 |
A method of manufacturing a semiconductor device in a salicide process to lower a contact resistance between a junction and a metal wiring, wherein a TiSi2 layer is formed on the junction at the same time when Ti is deposited by means of a plasma vapor deposition method using TiCl4 gas and H2 gas. Therefore, the method can simplify the process and reduce the amount of consumption of silicon atoms in the junction, compared to the conventional salicide process by which a TiSi2 layer is formed by annealing process after Ti is deposited, thus realizing a stable leakage current characteristic.
|
