| 摘要 |
PROBLEM TO BE SOLVED: To prevent oxidation of a capacitor plug under a ferroelectric sub stance film, in a thermal treatment process under an oxidizing atmosphere which process is performed for crystallization and damage restoration of the ferroelectric film, constituting an FeRAM cell of a COP structure. SOLUTION: After an upper surface of the capacitor plug 116 is covered with a silicon carbide film as a protective film 117, a capacitor lower electrode 118 and a capacitor dielectric film 119 are formed. |
