| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implantation device which is capable of preventing the deterioration of productivity due to the supply of gas into the device, and also improving its stability. SOLUTION: This invention relates an implantation device for injecting ions into a target, and comprises an arc camber 7 which is contained in a device body and functions as a first plasma producing chamber for generating ions to inject into a target, a gas supply pipe 5 which supplies a carrier gas into the arc chamber 7 from the outside of the device body, an arc chamber 36 which functions as a second producing chamber for generating energy electrons to be injected into the target together with ion beams IB which are extracted from the arc chamber 7 and move to the direction of the target by electric fields, a gas supply pipe 31 which supplies gas G for producing plasma into the arc chamber 36 from the outside of the device body.
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