发明名称 |
METHOD OF GROWING CALCIUM-SILICIDE THIN FILM |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of growing a thin film of single-phase calcium silicide(Ca2 Si), in which a mole ratio of Ca:Si is 2:1, on a silicon substrate via a magnesium-silicide thin film. SOLUTION: The silicon substrate on which the magnesium-silicide thin film is formed is exposed to a calcium vapor atmosphere in a closed space to cause substitution reaction between magnesium atoms and calcium atoms of the magnesium-silicide thin film, and thus growing the calcium-silicide thin film on the surface of the magnesium-silicide thin film.</p> |
申请公布号 |
JP2002289627(A) |
申请公布日期 |
2002.10.04 |
申请号 |
JP20010086119 |
申请日期 |
2001.03.23 |
申请人 |
UNIV SHIZUOKA |
发明人 |
MATSUI HIROKI;KURAMOTO MAMORU;ONO TSUTOMU;NOSE YASUO;MOMOSE YOSHIMI;TATSUOKA KOICHI;KUWABARA HIROSHI |
分类号 |
C01B33/06;C23C14/06;H01L21/36;H01L21/363;H01L31/04;(IPC1-7):H01L21/36 |
主分类号 |
C01B33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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