发明名称 METHOD OF GROWING CALCIUM-SILICIDE THIN FILM
摘要 <p>PROBLEM TO BE SOLVED: To provide a method of growing a thin film of single-phase calcium silicide(Ca2 Si), in which a mole ratio of Ca:Si is 2:1, on a silicon substrate via a magnesium-silicide thin film. SOLUTION: The silicon substrate on which the magnesium-silicide thin film is formed is exposed to a calcium vapor atmosphere in a closed space to cause substitution reaction between magnesium atoms and calcium atoms of the magnesium-silicide thin film, and thus growing the calcium-silicide thin film on the surface of the magnesium-silicide thin film.</p>
申请公布号 JP2002289627(A) 申请公布日期 2002.10.04
申请号 JP20010086119 申请日期 2001.03.23
申请人 UNIV SHIZUOKA 发明人 MATSUI HIROKI;KURAMOTO MAMORU;ONO TSUTOMU;NOSE YASUO;MOMOSE YOSHIMI;TATSUOKA KOICHI;KUWABARA HIROSHI
分类号 C01B33/06;C23C14/06;H01L21/36;H01L21/363;H01L31/04;(IPC1-7):H01L21/36 主分类号 C01B33/06
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