METHOD FOR FABRICATING SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a novel method for fabricating a semiconductor element in which dislocation density of semiconductor single crystal can be reduced. SOLUTION: On the flat major surface of a predetermined single crystal substrate, single or a plurality of unflat structure is formed by machining the substrate. Subsequently, semiconductor layers are formed sequentially on the single crystal substrate thus machined and a predetermined semiconductor element is fabricated.