| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device where the formation of of a cylindrical capacitor aperture and contact holes, which are in parallel with the aperture can be realized properly without being restricted by the limit of fine working technique, and to provide a method for manufacturing the device. SOLUTION: This semiconductor device is provided with the cylindrical capacitor aperture part formed in a first insulation film, a contact hole for capacitor which corresponds to one electrode of capacitor constituted in the cylindrical capacitor aperture part and formed in a second insulation film, a first contact hole which is formed in the second insulation film being in parallel with the contact hole for capacitor, and a second contact hole which is formed in the first insulation film being in parallel with the capacitor aperture part and is continuously connected with the first contact hole via a continuously connecting tandem part 9b'. |
