发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory in which a test time for performing a leak test can be shortened. SOLUTION: One end of a power source line for each memory cell arranged in the direction of row of a memory cell group arranged in a matrix state is connected to two first and second power source supply ends each independent of the other through two switching means on-off-controlled by inverse logic based on a test mode switching signal for switching a test mode or a normal mode. At the test mode, a power source is supplied to memory cells of rows to be tested from the first power source supply end, simultaneously, a power source is supplied to memory cells other than a row to be tested from the second power source supply end.
申请公布号 JP2002288997(A) 申请公布日期 2002.10.04
申请号 JP20010091296 申请日期 2001.03.27
申请人 TOSHIBA CORP;TOSHIBA INFORMATION SYSTEMS (JAPAN) CORP 发明人 ABE MITSUHIRO;FUTAKI HIDEO;OTA HIROO;KANAE KENTA
分类号 G01R31/28;G01R31/3185;G11C11/413;G11C29/04;G11C29/46;G11C29/50;H01L21/66;(IPC1-7):G11C29/00;G01R31/318 主分类号 G01R31/28
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