发明名称 |
SEMICONDUCTOR MEMORY |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory in which a test time for performing a leak test can be shortened. SOLUTION: One end of a power source line for each memory cell arranged in the direction of row of a memory cell group arranged in a matrix state is connected to two first and second power source supply ends each independent of the other through two switching means on-off-controlled by inverse logic based on a test mode switching signal for switching a test mode or a normal mode. At the test mode, a power source is supplied to memory cells of rows to be tested from the first power source supply end, simultaneously, a power source is supplied to memory cells other than a row to be tested from the second power source supply end.
|
申请公布号 |
JP2002288997(A) |
申请公布日期 |
2002.10.04 |
申请号 |
JP20010091296 |
申请日期 |
2001.03.27 |
申请人 |
TOSHIBA CORP;TOSHIBA INFORMATION SYSTEMS (JAPAN) CORP |
发明人 |
ABE MITSUHIRO;FUTAKI HIDEO;OTA HIROO;KANAE KENTA |
分类号 |
G01R31/28;G01R31/3185;G11C11/413;G11C29/04;G11C29/46;G11C29/50;H01L21/66;(IPC1-7):G11C29/00;G01R31/318 |
主分类号 |
G01R31/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|