| 摘要 |
PROBLEM TO BE SOLVED: To provide a complementary insulated gate transistor of a new structure which suppresses a short channel effect and does not need an element isolation area to further miniaturize the transistor. SOLUTION: Gate electrodes 3 for an n-type MOSFET and gate electrodes 4 for an p-type MOSFET are formed apart from a plate-like semiconductor layer 1. Output electrodes 5 are formed between each gate electrode 3 and 4 that are common for both gate electrodes 3 and 4. In the area for the n-type MOSFET, a diffusion layer 6 is formed on the semiconductor layer 1 at the opposite side of the output electrodes 5 with the gate electrodes 3 between. In the area for the p-type MOSFET, a hole conductive type diffusion layer 7 is formed on the semiconductor layer 1 at the opposite side of the output electrodes 5 with the gate electrodes 4 between.
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