| 摘要 |
A method of writing/reading an array of magnetoresistive cells (11), with each cell in the array having associated therewith a first current line (14) that generates an easy axis field and a second orthogonal current line (12) that generates a hard axis field when current is applied thereto. The method includes initially applying a current to the second orthogonal current lines in a first direction that generates a hard axis field to switch end domains in all cells in the array to a fixed direction, and selecting a cell in the array for write/read using a half-select technique including supplying a half-select current to the first current line associated with the selected cell to generate a half-select easy axis field and, simultaneously, supplying a half-select current in the first direction to the second current line associated with the selected cell to generate a half-select hard axis field. |
