| 摘要 |
The present invention provides a solution to the problem of controlling the inter-layer impedance of a deposited thin film layer stack accommodating high-density interconnects. The invention enables high-density signal lines to be routed over a reference plane to achieve a desired characteristic impedance. In one embodiment, a first thin-film metal layer is formed on a planarized layer fabricated from multiple thin film dielectric layers. The reduced pad footprint in the first thin-film metal layer allows a major portion of the first thin-film metal layer to serve as a reference, or ground, plane to signal lines formed in a second thin-film metal layer that is separated from the first thin-film metal layer by a thin dielectric layer.
|
