发明名称 PASSIVATION LAYER FOR MOLECULAR ELECTRONIC DEVICE FABRICATION
摘要 <p>A process of fabricating a molecular electronic device that preserves the integrity of the active molecular layer of the electronic device during processing is described. In one aspect, a passivation layer is provided to protect a molecular layer form degradation during patterning of the top wire layer. A molecular electronic device structure and a memory system that are formed from this fabrication process are described.</p>
申请公布号 WO2002078056(A2) 申请公布日期 2002.10.03
申请号 US2002008934 申请日期 2002.03.21
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