| 摘要 |
<p>1,219,652. Semi-conductor laser diodes. R.C.A. CORP. 26 March, 1968 [29 June, 1967], No. 14412/68. Headings H1C and H1K. A semi-conductor laser device comprises at least a pair of PN junctions optically coupled upon excitation and arranged so that when one junction is forward biased the other is reverse biased. The diode 10 comprises a stack 11 of layers 12-23 of one micron thick alternate layers of N-type and P-type semi-conductor material such as GaAs, GaAs x P 1-x , InP, InAs, GaSb or GaIn x As 1-x formed by successive epitaxial depositions of the layers from the vapour phase and doped by tellurium or zinc. End faces 36, 38 are polished and/or cleaved to form a resonant cavity. A continuous or pulsed D.C. is applied to terminal 48 so that junctions 24- 29 are forward biased and junctions 30-34 are reverse-biased and stimulated emission takes place in junctions 24-29, light being emitted from partially transmitting end faces 36, 38. Since the thickness of each of the layers is only one micron the layers are optically transparent to the stimulated emission of radiation so that the emission from separate layers are synchronized. The voltage applied across the device may be alternating so that lasing takes place adjacent only one half of the junctions in one half cycle of the alternating current and adjacent the other half of the junctions during the second half cycle. The diode may be operated at room temperature or 77‹ K. Sides 40, 42 may be roughened so as not to reflect light or lapped so that they are not perpendicular to the PN junctions. The device may operate as an amplifier.</p> |
