发明名称 POROUS SILICON NITRIDE ARTICLE AND METHOD FOR PRODUCTION THEREOF
摘要 A porous silicon nitride article (5) which is prepared by nitriding a formed article containing metallic silicon (3) as a primary component, characterized in that the silicon nitride article has a porous structure having an average pore diameter of 3 ñm or more, has a total content of silicon and nitrogen of 95 % or more and has a degree of nitrization of silicon of 90 % or more. The porous silicon nitride article has a porous structure having a large average pore diameter and a specimen from the article exhibits a high thermal conductivity and a low thermal expansion coefficient, and thus the article can be suitably used for parts of a gas and/or solution clarification device such as a ceramic filter.
申请公布号 WO02076909(A1) 申请公布日期 2002.10.03
申请号 WO2002JP02826 申请日期 2002.03.25
申请人 NGK INSULATORS,LTD.;INOUE, KATSUHIRO;MORIMOTO, KENJI;MASUDA, MASAAKI;KAWASAKI, SHINJI;SAKAI, HIROAKI 发明人 INOUE, KATSUHIRO;MORIMOTO, KENJI;MASUDA, MASAAKI;KAWASAKI, SHINJI;SAKAI, HIROAKI
分类号 B01D39/20;B01D53/22;B01D53/86;B01D71/02;B01J27/24;B01J32/00;B01J35/00;B01J35/04;B01J35/10;C04B35/584;C04B35/591;C04B38/00;F01N3/28;(IPC1-7):C04B38/00 主分类号 B01D39/20
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