发明名称 FIELD-EFFECT TRANSISTOR
摘要 <p>A field-effect transistor highly sensitive to anions in a solution of pH1 to pH14. A field-effect transistor comprises a source electrode, a drain electrode, a channel having a hydrogen-termination surface of diamond exposed between the source and drain electrodes, and a gate of a KCL solution containing anions (Cl-) in contact with the exposed hydrogen-termination surface of diamond of the channel, so as to determine the concentration of anions (Cl-) in the KCL solution.</p>
申请公布号 WO2002077632(P1) 申请公布日期 2002.10.03
申请号 JP2002002414 申请日期 2002.03.14
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