| 摘要 |
A fifth interlayer insulating film is formed on a fourth interlayer insulating film. A third contact hole is formed in such a manner as to pass through the fourth and fifth interlayer insulating films. First and second high melting point metal films are deposited on the inner surface of the third contact hole and the surface of the fifth interlayer insulating film, and then etched-back until the fifth interlayer insulating film is exposed, to form a metal plug. A second interconnection layer is formed on the fifth interlayer insulating film in such a manner as to be conducted to the metal plug. The thickness of the fifth interlayer insulating film is set to be larger than the depth of a recess formed by depressing the upper end surface of the metal plug upon etching-back.
|
