发明名称 |
Methods of forming ultra-thin buffer oxide layers for gate dielectrics |
摘要 |
A first option is a method of forming an ultra thin buffer oxide layer comprises the following steps. A silicon substrate having STI regions formed therein separating at least one active area is provided. The silicon substrate has an upper surface. A sacrificial oxide layer is formed over the silicon substrate and the STI regions. Oxygen is implanted within the silicon substrate. The oxygen implant having a peak concentration proximate the upper surface of the silicon substrate. The sacrificial oxide layer is stripped and removed. A gate dielectric layer is formed over the silicon substrate. A conductor layer is deposited over the gate dielectric layer. The structure is annealed to form ultra-thin buffer oxide layer between the silicon substrate and the gate dielectric layer. A second option is a method of forming an ultra-thin buffer oxide layer, comprises the following steps. A silicon substrate having STI regions formed therein separating at least one active area is provided. The silicon substrate has an upper surface. A gate dielectric layer is formed over the silicon substrate and the STI regions. A sacrificial oxide layer is formed over the gate dielectric layer. Oxygen is implanted within the silicon substrate. The oxygen implant having a peak concentration proximate the upper surface of the silicon substrate. The sacrificial oxide layer is stripped and removed. A conductor layer is deposited over the gate dielectric layer. The structure is annealed to form ultra-thin buffer oxide layer between the silicon substrate and the gate dielectric layer.
|
申请公布号 |
US6458717(B1) |
申请公布日期 |
2002.10.01 |
申请号 |
US20000615810 |
申请日期 |
2000.07.13 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
LEE JAMES YONG MENG;LI XIA;ZHANG YUNQZANG |
分类号 |
H01L21/265;H01L21/28;H01L21/314;H01L29/51;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|