发明名称 |
Plasma processing apparatus |
摘要 |
A plurality of antennae generate a plasma in the chamber containing a workpiece, and the relative outputs of the antennae are varied as a detector detects a property or parameter of the resultant plasma or process. The relative outputs of the antennae are controlled in accordance with the property or parameter detected. The detector, which detects the property or parameter at or near the workpiece location, is a Langmuir probe which is shielded from the plasma by a semiconductor or insulating layer and is driven.
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申请公布号 |
US6458239(B1) |
申请公布日期 |
2002.10.01 |
申请号 |
US19980142542 |
申请日期 |
1998.09.10 |
申请人 |
SURFACE TECHNOLOGY SYSTEMS PLC |
发明人 |
BHARDWAJ JYOTI KIRON;LEA LESLIE MICHAEL |
分类号 |
H05H1/00;H01J37/32;H01L21/302;H05H1/46;(IPC1-7):H05H1/00;C23C16/00 |
主分类号 |
H05H1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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