发明名称 |
Plasma & reactive ion etching to prepare ohmic contacts |
摘要 |
A method of making a low-resistance electrical contact between a metal and a layer of p-type CdTe surface by plasma etching and reactive ion etching comprising:a) placing a CdS/CdTe layer into a chamber and evacuating said chamber;b) backfilling the chamber with Argon or a reactive gas to a pressure sufficient for plasma ignition; andc) generating plasma ignition by energizing a cathode which is connected to a power supply to enable the plasma to interact argon ions alone or in the presence of a radio-frequency DC self-bias voltage with the p-CdTe surface.
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申请公布号 |
US6458254(B2) |
申请公布日期 |
2002.10.01 |
申请号 |
US19970937718 |
申请日期 |
1997.09.25 |
申请人 |
MIDWEST RESEARCH INSTITUTE |
发明人 |
GESSERT TIMOTHY A. |
分类号 |
C23C14/34;H01L21/302;H01L21/461;H01L21/465;H01L31/0224;H01L31/072;H01L31/18;(IPC1-7):H01L21/461 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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