| 摘要 |
PURPOSE: A method for measuring contact resistance of semiconductor device is provided to exactly measure a contact resistance by using test patterns without performing turn-on of a gate. CONSTITUTION: A first insulating oxide(50) of a first test pattern is formed at parallel with a gate(10) and a contact is formed at the first insulating oxide(50) of each cell, thereby forming the first test pattern so as to a chain. A second insulating oxide of a second test pattern is formed and a contact is formed at the second insulating oxide, thereby forming the second test pattern so as to an array. A resistance is measured in the first and second test patterns, and a contact resistance is measured by removing surface resistance components.
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