| 摘要 |
PURPOSE: A measurement method of a reflectance ration of a thin film is provided to easily control thickness of the thin film by in-line SEM(Scanning Electron Microscopy) using a test pattern. CONSTITUTION: A test pattern(24) for measuring reflectance ratio is formed at a desired portion of a scribe line for dividing a plurality of main chips formed on a wafer(21), wherein the thickness of the test pattern(24) is same to an objective pattern. The wafer(21) is then loaded in an in-line SEM including an optical detector(25). An optical source for measuring reflectance ratio is irradiated on the test pattern(24). Amount of the optical source reflected to the optical detector(25) through the test pattern(24) is measured by using an optical measuring unit(27). Then, the thickness of the test pattern(24) is calculated.
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