发明名称 |
SEMICONDUCTOR WAFER AND MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF SEMICONDUCTOR OPTICAL AMPLIFIER |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor wafer manufactured by a simplified device manufacturing process, a method of manufacturing a semiconductor wafer, and a method of manufacturing a semiconductor optical amplifier. SOLUTION: Light of different light intensities P is irradiated to a predetermined region at the same time from a time Ta before supplying a raw material gas (TMIn, TEG, AsH3 ) for growing a strain bulk active layer (In1-x Gax Asy P1-y ) to a time Tb after stopping the supply of the material gas to produce a local composition modulation, thereby forming a wafer having a desired amount of strain positively and widely.
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申请公布号 |
JP2002280672(A) |
申请公布日期 |
2002.09.27 |
申请号 |
JP20010076232 |
申请日期 |
2001.03.16 |
申请人 |
NIPPON TELEGR & TELEPH CORP <NTT> |
发明人 |
ITO MASAYUKI;TOMORI YUICHI |
分类号 |
C23C16/30;H01L21/205;H01S5/323;H01S5/50;(IPC1-7):H01S5/323 |
主分类号 |
C23C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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