| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method for manufacturing a field effect semiconductor device in which parasitic resistance can be reduced by activating impurities at the channel side forward end part of a source region or a drain region sufficiently by a simple means even if the source region or drain region is subjected to impurity activation heat treatment by applying an absorber film process. SOLUTION: Using a gate electrode 13 formed on a sidewall 14 as a mask, ions are implanted in order to form a source extension region 15 and a drain extension region 16 on the surface of a silicon semiconductor substrate 11 from both opposite sides of the gate electrode channel direction while spacing apart from each other. After removing the sidewall, an absorber film comprising an insulation film 17 and a metal film 18 covering the entirety including a gate electrode 13 is formed and irradiated with laser light thus annealing the source extension 15 and the drain extension region 16.
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