| 摘要 |
PROBLEM TO BE SOLVED: To provide a device and a method for processing plasma, capable of generating uniform plasma and uniformly processing a base. SOLUTION: In a plasma processing device equipped with a base electrode 4 and an antenna 5 to receive the supply of high frequency power having frequencies ranging from 50 MHz to 3 GHz from a high frequency power supply 4 disposed face to face with the base electrode 4 in a vacuum container 1, a dielectric 11 wherein a pin hole 13 for a feeding pin connected to the center part of the antenna 5 and to the high frequency power supply 4 to pass through, and through-holes 14 equally spaced from the pin hole 13 while passing through in the same direction as the pin hole 13 are formed, a is brought into contact with and disposed between the inner surface of the vacuum container 1 and the antenna 5. Thereby, an electromagnetic field distribution with a TM01 mode is brought to the antenna by the existence of the dielectric 11, and uniform plasma can be generated. |
