| 摘要 |
PROBLEM TO BE SOLVED: To provide a huge magnetoresistive effect element that inhibits variation in current density in the huge magnetoresistive effect element, can effectively utilize an element, and at the same time has reliability and a long life, and to provide a reliable magnetoresistive effect head, a thin-film magnetic memory, and a thin-film magnetic sensor that have the huge magnetoresistive effect element. SOLUTION: The huge magnetoresistive effect element 2 comprises a laminated film having ferromagnetic, non-magnetic, and antiferromagnetic films; allows current to flow in a direction vertical to the film surface of the laminated film 2 from upper and lower electrodes; forms a metal film 21 having specific resistance that is sufficiently smaller than the laminated film 2 on the laminated film 2; arranged a hard magnetic film 3 at both outsides in the width direction of the laminated film 2; forms an insulating layer 4 over the hard magnetic and metal films 3 and 21; and electrically connects the upper electrode to the metal film 21 via an opening 5 between the insulating layers 4 at both the sides. Also, the huge magnetoresistive effect element 2 is provided to compose the magnetoresistive effect head 1, thin-film magnetic memory, and thin- film magnetic sensor.
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