发明名称 HYBRID THIN FILM PHOTOELECTRIC CONVERTER AND MANUFACTURING METHOD THEREFOR
摘要 <p>PROBLEM TO BE SOLVED: To provide a manufacturing method which improves the performance of a hybrid thin film photoelectric converter, raises the flexibility of a manufacturing process and improves production efficiency. SOLUTION: The hybrid thin film photoelectric converter comprises an amorphous photoelectric conversion unit 3 including a p-type layer 3p, an amorphous i-type photoelectric conversion layer 3i and an n-type layer 3n deposited by plasma CVD with containing silane and dilute hydrogen as main components of reactive gas on a transparent substrate 1 and a crystalline photoelectric conversion unit 4 including a p-type layer 4p, a crystalline i-type photoelectric conversion layer 4i and an n-type layer 4n deposited thereon, and the p-type layer 4p included in the crystalline unit 4 has a larger volume crystallization proportion than that of the n-type layer 3n included in the amorphous unit 3.</p>
申请公布号 JP2002280584(A) 申请公布日期 2002.09.27
申请号 JP20010078462 申请日期 2001.03.19
申请人 KANEGAFUCHI CHEM IND CO LTD 发明人 FUKUDA SUSUMU;SAWADA TORU
分类号 H01L31/04;(IPC1-7):H01L31/04 主分类号 H01L31/04
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