发明名称 |
HYBRID THIN FILM PHOTOELECTRIC CONVERTER AND MANUFACTURING METHOD THEREFOR |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a manufacturing method which improves the performance of a hybrid thin film photoelectric converter, raises the flexibility of a manufacturing process and improves production efficiency. SOLUTION: The hybrid thin film photoelectric converter comprises an amorphous photoelectric conversion unit 3 including a p-type layer 3p, an amorphous i-type photoelectric conversion layer 3i and an n-type layer 3n deposited by plasma CVD with containing silane and dilute hydrogen as main components of reactive gas on a transparent substrate 1 and a crystalline photoelectric conversion unit 4 including a p-type layer 4p, a crystalline i-type photoelectric conversion layer 4i and an n-type layer 4n deposited thereon, and the p-type layer 4p included in the crystalline unit 4 has a larger volume crystallization proportion than that of the n-type layer 3n included in the amorphous unit 3.</p> |
申请公布号 |
JP2002280584(A) |
申请公布日期 |
2002.09.27 |
申请号 |
JP20010078462 |
申请日期 |
2001.03.19 |
申请人 |
KANEGAFUCHI CHEM IND CO LTD |
发明人 |
FUKUDA SUSUMU;SAWADA TORU |
分类号 |
H01L31/04;(IPC1-7):H01L31/04 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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